Optimization of ohmic contacts for reliable heterostructure GaAs materials
- 1 November 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (11) , 1265-1271
- https://doi.org/10.1007/bf02673341
Abstract
No abstract availableKeywords
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- DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTsIEEE Transactions on Electron Devices, 1989
- Formation of thermally stable high-resistivity AlGaAs by oxygen implantationApplied Physics Letters, 1988
- High-performance AlGaAs/GaAs MODFET'S with improved ohmic contactsIEEE Transactions on Electron Devices, 1986