Amorphous-silicon field-effect device and possible application
- 15 March 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (6) , 179-181
- https://doi.org/10.1049/el:19790126
Abstract
The characteristics of an insulated-gate field-effect transistor made from amorphous silicon (a-Si) deposited in a glow discharge are discussed. It is suggested that the a-Si device could be applied with advantage in an addressable matrix of a liquid-crystal display panel.Keywords
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