Quantitative photoelastic measurement of residual strains in undoped semi-insulating gallium arsenide
- 15 August 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (4) , 365-367
- https://doi.org/10.1063/1.96166
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Direct observation of dislocation effects on threshold voltage of a GaAs field-effect transistorApplied Physics Letters, 1983
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Intrinsic Piezobirefringence of Ge, Si, and GaAsPhysical Review B, 1969