On Some Transients in the Pulse Response of Point-Contact Germanium Diodes

1 November 1952

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE

Vol. 40 (11) , 1483-1487
https://doi.org/10.1109/JRPROC.1952.273984

Abstract

Several recovery time effects in germanium point contact diodes are described and a hypothesis is proposed to explain the observed effects. This hypothesis postulates the presence of traps in the germanium p layer near the point electrode. Measurements and computations based on this hypothesis give trap densities of the order of 1016/cm3, trap depths in the energy band of the order of 0.3 electron volts, and capture cross-section diameters for the traps of the order of 0.3 Å.

Keywords

GERMANIUM
DIODES
ELECTRON TRAPS
ELECTRODES
VOLTAGE
PULSE MEASUREMENTS
RECTIFIERS
FREQUENCY
CONDUCTIVITY
SURFACE TREATMENT