Experimental and Theoretical Study of the Charge Build-Up in an ECR Etcher

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Abstract
The charge build-up in an electron cyclotron resonance (ECR) etcher has been studied experimentally and theoretically. The experimental results show that the charge build-up profiles of the wafer are convex and positive, and are detected only when the RF bias exists. We have derived a simplified equivalent circuit model for the wafer in an ECR etcher. The charge build-up profile predicted with the simplified equivalent circuit model shows a good agreement with the experimental results. It is concluded that the variation of plasma potential caused by the radial RF current across the magnetic field results in the charge build-up.

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