GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate

1 March 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (3) , 121-123
https://doi.org/10.1109/edl.1987.26573

Abstract

A GaAs enhancement/depletion (E/D) MESFET 1-kbit static RAM has been fabricated on a 2-in GaAs-on-Si substrate. This is the most complex GaAs circuit reported to date for GaAs-on-Si material. The GaAs layer is grown on a

Keywords

GALLIUM ARSENIDE
MESFETS
SILICON
APPLICATION SPECIFIC INTEGRATED CIRCUITS
DIGITAL INTEGRATED CIRCUITS
SURFACE MORPHOLOGY
RANDOM ACCESS MEMORY
LABORATORIES
INSTRUMENTS
ANNEALING

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