Frequency doubling and memory effects in the Spin Hall Effect

Preprint

23 December 2008

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.0812.4325

Abstract

We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.

Keywords

FREQUENCY DOUBLING
TRANSVERSE VOLTAGE
SPIN HALL EFFECT
MEMORY EFFECTS
PHASE SHIFT
SPINTRONIC

All Related Versions

Version 1, 2008-12-23, ArXiv
Published version: Physical Review B, 79 (15), 153307.

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