A Dynamic Monte Carlo Simulation of Conduction in Submicron Gaas Devices at 77 K
- 1 January 1984
- book chapter
- Published by Springer Nature
Abstract
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This publication has 4 references indexed in Scilit:
- Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band orderingJournal of Applied Physics, 1977
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Two-dimensional analysis of substrate effects in junction f.e.t.sElectronics Letters, 1970
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970