New Gate Electrodes for Fully-Depleted Soi/cmos; Tin and Poly Si-Ge
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 148-149
- https://doi.org/10.1109/soi.1992.664835
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A polycrystalline-Si/sub 1-x/Ge/sub x/-gate CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Tungsten silicide/titanium nitride compound gate for submicron CMOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Design considerations for thin-film SOI/CMOS device structuresIEEE Transactions on Electron Devices, 1989