Annealing conditions for intrinsic CdTe
- 25 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (4) , 552-554
- https://doi.org/10.1063/1.123142
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Electronic quasichemical formalism: Application to arsenic deactivation in siliconPhysical Review B, 1998
- Channels of Cd diffusion and stoichiometry in CdTe grown by molecular beam epitaxyApplied Physics Letters, 1998
- P-T-X phase equilibrium and vapor pressure scanning of non-stoichiometry in CdTeJournal of Crystal Growth, 1996
- CdTe I: Solidus curve and composition-temperature-tellurium partial pressure data for Te-rich CdTe(s) from optical density measurementsJournal of Physics and Chemistry of Solids, 1996
- First-principles calculation of native defect densities inTePhysical Review B, 1994
- Vapor Pressure Scanning of Nonstoichiometry in CdTeJournal of Solid State Chemistry, 1993
- Beyond the local-density approximation in calculations of ground-state electronic propertiesPhysical Review B, 1983
- The defect structure of CdTe: Hall dataJournal of Solid State Chemistry, 1975
- The defect structure of CdTe: Self-diffusion dataJournal of Solid State Chemistry, 1975
- Self-diffusion of cadmium and tellurium in cadmium tellurideJournal of Physics and Chemistry of Solids, 1968