The epitaxial growth of zinc sulphide on silicon by forced vapour transport in argon flow
- 1 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 371-374
- https://doi.org/10.1016/0022-0248(72)90186-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The epitaxial growth of zinc sulphide on silicon by forced vapour transport in hydrogen flowJournal of Materials Science, 1970
- The epitaxial growth of zinc sulphide on silicon by vacuum evaporationJournal of Physics D: Applied Physics, 1968
- Parameters of growth by the flow method of ZnS crystalsBritish Journal of Applied Physics, 1966