A calibrated model for the subthreshold operation of a short channel MOSFET including surface states
- 1 June 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (3) , 633-644
- https://doi.org/10.1109/jssc.1979.1051229
Abstract
Describes a simple two-dimensional subthreshold model for short channel MOSFET's. The effects of surface state density are also included in the model. A regional charge density approximation was used in the solution of Poisson's equation and an analytical solution of the continuity equation in two dimensions was derived. Excessive computations are avoided in the present model; this was made possible by the use of a valid regional charge approximation. The model was experimentally verified by performing measurements on short channel devices. The model was calibrated from measurements on a long channel device which was present on the same silicon chip. Results are presented for the subthreshold leakage current as a function of substrate bias, polysilicon gate length, diffusion depth and surface state density.Keywords
This publication has 15 references indexed in Scilit:
- Inversion charge transistor (ICT) for better threshold control in small dimensionsIEEE Journal of Solid-State Circuits, 1978
- Simple model for threshold voltage in a short-channel IGFETIEEE Transactions on Electron Devices, 1977
- A short channel MOSFET modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977
- Interface states on semiconductor/insulator surfacesC R C Critical Reviews in Solid State Sciences, 1976
- Device Design Considerations for Ion Implanted n-Channel MOSFETsIBM Journal of Research and Development, 1975
- An analysis of the threshold voltage for short-channel IGFET'sSolid-State Electronics, 1973
- Inadequacy of the classical theory of the MOS transistor operating in weak inversionIEEE Transactions on Electron Devices, 1973
- The influence of surface potential fluctuations on the operation of the MOS transistor in weak inversionIEEE Transactions on Electron Devices, 1973
- A two-dimensional mathematical model of the insulated-gate field-effect transistorSolid-State Electronics, 1973
- Low level currents in insulated gate field effect transistorsSolid-State Electronics, 1972