Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysilicon

1 March 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (3) , 617-621
https://doi.org/10.1109/t-ed.1985.21987

Abstract

We correlate the work-function difference φps⁰between the polysilicon gate and the silicon substrate in an MOS system with the doping level and carrier concentration in polysilicon. Polysilicon was doped by ion implantation with arsenic and phosphorus. The doping level was varied from 10¹⁹to 10²⁰cm^-3. Hall measurements were used to determine the carrier concentration in polysilicon at a given doping level. The Hall mobility and resistivity as a function of doping level were also obtained. The work function difference φps⁰was determined by capacitance-voltage measurements on polysilicon-SiO2-Si capacitors with different oxide thicknesses. When plotted against the doping level, the work-function difference had a maximum at a dopant concentration of ≈ 5 × 10¹⁹cm^-3, which corresponds to an electron concentration of 1.5 × 10¹⁹cm^-3. At higher doping levels the value of φps⁰decreases. The results can not be fully understood in terms of the Si band structure.

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