Thermionic-emission diffusion model of current conduction in polycrystalline silicon

1 May 1985

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 32 (5) , 998-1000
https://doi.org/10.1109/t-ed.1985.22061

Abstract

A comprehensive model of current conduction in polycrystalline silicon based on thermionic-emission diffusion theory is developed. On the basis of this model, a more general expression for the effective majority-carrier mobility is derived which reduces to thermionic-emission (TE) theory-based expressions under certain simplifying assumptions and also helps in understanding the physical significance of the scaling factor used by earlier workers to explain their experimental results.

Keywords

MODEL
POLYCRYSTALLINE
SILICON
THERMIONIC
SIMPLIFYING
EXPERIMENTAL
WORKERS
MOBILITY
EARLIER

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