Processing of titanium films on silicon using a multiscanned electron beam
- 19 August 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (17) , 752-754
- https://doi.org/10.1049/el:19820509
Abstract
A multiscanned electron beam has been used to process titanium films thermally on single-crystal silicon. The redistribution of titanium and the composition of the processed films were studied by Rutherford backscattering. Oxygen contamination within the titanium is found to control the reaction rate. Processing conditions have been established which give stoichiometric TiSi2 layers and the removal of oxygen from the system. These results have been confirmed by Auger analysis and the surface texture has been examined using scanning electron microscopy.Keywords
This publication has 1 reference indexed in Scilit:
- Ion Beam Surface Layer AnalysisPublished by Springer Nature ,1976