Comment on ‘‘Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights’’ [J. Appl. Phys. 6 1, 5159 (1987)]
- 1 July 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (1) , 443-444
- https://doi.org/10.1063/1.341215
Abstract
Eglash and co-workers [J. Appl. Phys. 61, 5159 (1987)] studying the dependence of the voltage intercept of the C−2-V plots for the engineered Schottky barrier diodes on the thickness of the p+ region used an analytical expression of the C-V characteristics for the prediction of the voltage intercept. In this communication, a general expression is derived for the C-V characteristics of the Schottky contacts with changing dopant concentration at the M-S interface. It is shown that the expression used by Eglash and co-workers is a special case of this general expression.This publication has 2 references indexed in Scilit:
- Engineered Schottky barrier diodes for the modification and control of Schottky barrier heightsJournal of Applied Physics, 1987
- GaAs Schottky varactors for linear frequency tuning in X-bandPhysica Status Solidi (a), 1986