Image forces and the behavior of mobile positive ions in silicon dioxide
- 1 May 1973
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (9) , 458-459
- https://doi.org/10.1063/1.1654711
Abstract
The electrostatic image force has important effects on the behavior of ions located near an interface. In metallized thin films of SiO2 on silicon the attractive image potential depletes ions from the bulk and localizes them near the interfaces with metal or silicon. For ions localized near the silicon interface, it is shown that a uniform lateral distribution of ions is inherently unstable and tends to condense into patches of high concentration.Keywords
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