Current gain recovery in silicon nitride passivated planar transistors by hydrogen implantation
- 1 August 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 22 (8) , 531-533
- https://doi.org/10.1109/T-ED.1975.18174
Abstract
During deposition of silicon nitride, the low-current hFEof silicon planar transistors decreases. When the nitride layer completely seals the oxide from the ambient, the initial value of hFEcannot be restored by annealing at 500°C in forming gas. To eliminate this difficulty, hydrogen ions have been implanted at an energy of 70 keV and at doses varying from 1.1013to 1.1016cm-2through the nitride into the oxide. Optimum hFErecovery has been obtained with implantation at a dose of 3.1015cm-2followed by a radiation damage annealing at 400-500°C in dry nitrogen.Keywords
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