Structural Properties of Yttria-stabilized Zirconia Thin Films Grown by Pulsed Laser Deposition
- 1 April 1999
- journal article
- research article
- Published by Springer Nature in Journal of Materials Research
- Vol. 14 (4) , 1329-1336
- https://doi.org/10.1557/jmr.1999.0181
Abstract
Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.Keywords
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