Intensity modulation at 1.06μm wavelength using ultranarrow GaInAsP quantum wells

• 20 July 1989
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 25  (15) , 973-975
• https://doi.org/10.1049/el:19890651

Abstract

Keywords

• INTENSITY MODULATION
• FIELD-INDUCED TUNNELLING
• QUANTUM WELLS
• 1.06 MICRON
• ELECTROABSORPTION
• GAINASP