Selectively implanted buried oxide (SIBO) process for VLSI applications
- 19 November 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (24) , 1316-1317
- https://doi.org/10.1049/el:19870910
Abstract
A novel process for achieving a thin (submicrometre-thick) monocrystalline silicon layer on an insulator (SOI) with a connection to the substrate at the edges of the insulator is presented. Results are obtained to prove the electrical connection of the SOI layer to the bulk silicon.Keywords
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