Time and spatial distribution of amplified acoustic flux in n-InSb

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Abstract
The growth process of amplified acoustic flux in n‐InSb under an applied constant‐current pulse is analyzed in detail, taking into account flux blocking and reflection at the contact‐semiconductor interfaces. The analysis accounts well for the observed time and spatial distribution of the amplified flux, provided spurious effects associated with current feedback and hole injection is eliminated. The measurements provide conclusive evidence that the predominant source of the amplified flux in n‐InSb is the thermal‐equilibrium phonon distribution; the piezoelectric shock produced at the contact boundaries by the onset of the applied pulse plays no role in this respect. The information derived here on the detailed mechanism governing the flux growth is utilized in measurements of the gain parameters in InSb to be described in the following paper.