Infrared excitation spectrum of 40.4-meV acceptor level in neutron-irradiated gallium-doped silicon
- 15 July 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (2) , 167-168
- https://doi.org/10.1063/1.95156
Abstract
An infrared absorption spectrum has been obtained for the shallow A2 acceptor level formed by neutron irradiation of Si:Ga. After a 600 °C anneal, absorption peaks were observed at 213.1, 244.9, and 286.9 cm.−1 These peaks appear to correspond to lines 1, 2, and 4 of a group III‐like acceptor spectrum originating from a ground state with a 40.4‐meV binding energy. Hall effect measurements confirm the presence of an acceptor level at this energy.Keywords
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