Uniformly beam expanded 1.3 µm laser diodeswith thinseparate confinement heterostructure layers for highcoupling efficiency and good temperature characteristic
- 25 April 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (9) , 819-821
- https://doi.org/10.1049/el:19960531
Abstract
Low-loss-fibre-coupling 1.3 µm laser diodes with excellent temperature characteristics were fabricated by employing thin (20 nm) separate confinement heterostructure layers. Fabricated LDs with an active layer width of 1.5 µm show singlemode-fibre coupling loss of 2.6 dB, threshold current Ith of 16.4 (51.0) mA and high efficiency of 0.5 (0.3) W/A at 25 (85) °C, respectively.Keywords
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