Effects of the Growth Temperature and Substrate Orientation on the Incorporation of Si, Ge and Sn into Vapour Epitaxial GaAs
- 1 March 1974
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 13 (3) , 484-494
- https://doi.org/10.1143/jjap.13.484
Abstract
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