Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples

19 July 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (15) , 1119-1122
https://doi.org/10.1049/el:19900724

Abstract

The crystalline order and itoechiomctry of the near surface of GaAs and InP substrates after rapid thermal annealing using a silicon wafer as a protecting cap have been deduced from angle resolved X-ray photo-emission measurements. A monolayer of As or P appears to be enough to prevent further material decomposition. For implanted samples (up to 10¹⁴/cm² Si), the crystalline order is restored after the rapid anneal (without any important stoechiometry modification).

Keywords

PROTECTING CAP
STOICHIOMETRY
IMPLANTED SAMPLES
INP
X-RAY PHOTOEMISSION STUDY
MATERIAL DECOMPOSITION
CRYSTALLINE ORDER
GAAS
RAPID THERMAL ANNEALING
MONOLAYER

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