Ferroelectric Bi4–x Sm x Ti3 O12 Thin Films Fabricated by Pulsed Laser Deposition for Nv-RAM Applications
- 1 August 2004
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 61 (1) , 123-127
- https://doi.org/10.1080/10584580490459026
Abstract
Ferroelectric Bi4–x Sm x Ti3O12 (BSmT) thin films have been fabricated on Pt/TiO x /SiO2/Si substrates by pulsed laser deposition (PLD) and their ferroelectric properties have been characterised. The remanent polarisation (2P r ) was 17.5 μ C/cm2, 41.8 μ C/cm2, 9.3 μ C/cm2, for x = 0.55, 0.70, and 1.00, respectively, at an applied maximum field of 450 kV/cm. The polarisation of the BSmT (x = 0.70) film decreased to 86% of the initial value after 5.0× 108 switching cycles.Keywords
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