Pulsed Laser Crystallization of Amorphous Silicon Films: Effects of Substrate Temperature and Laser Shot Density
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Graphoepitaxy as an approach to oriented crystallization on amorphous substratesJournal of Crystal Growth, 2008
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFTsSpringer Proceedings in Physics, 1991
- Laser Crystallization of Amorphous Silicon on Insulating SubstratesSpringer Proceedings in Physics, 1991
- Excimer Laser Crystallized Amorphous Silicon Films: Effects of Shot Density and Substrate TemperatureMRS Proceedings, 1991
- Excimer-laser-induced crystallization of hydrogenated amorphous siliconApplied Physics Letters, 1990
- Transmission Electron Microscopy of Excimer Laser Crystallized Amorphous Si Thin FilmsMRS Proceedings, 1990
- Orientation dependence of laser amorphization of crystal SiPhysical Review Letters, 1989
- XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TftsMRS Proceedings, 1986