A new di/dt control gate drive circuit for IGBTs to reduce EMI noise and switching losses
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 1443-1449 vol.2
- https://doi.org/10.1109/pesc.1998.703241
Abstract
In this paper, a new di/dt control gate drive circuit for IGBT devices is proposed. By this circuit, the switching performances of IGBT such as dv/dt, di/dt, surge voltage and also switching losses are reduced. This scheme can also eliminate a snubber circuit from the inverter system. From experimental tests, the EMI noise level is reduced by more than 15 dBuV/m as compared with conventional systems.Keywords
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