Reversible breakdown voltage collapse in silicon gate-controlled diodes

This publication has 8 references indexed in Scilit:

• Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors
  IEEE Transactions on Electron Devices, 1979
• Avalanche injection into the oxide in silicon gate-controlled devices—II. Experimental results
  Solid-State Electronics, 1975
• Surface breakdown in silicon planar junctions—A computer-aided experimental determination of the critical field
  Solid-State Electronics, 1974
• Hole Currents in Thermally Grown SiO2
  Journal of Applied Physics, 1972
• Surface breakdown in silicon planar diodes equipped with field plate
  Solid-State Electronics, 1972
• Effect of surface fields on the breakdown voltage of planar silicon p-n junctions
  IEEE Transactions on Electron Devices, 1967
• Breakdown voltage of planar silicon junctions
  Solid-State Electronics, 1966
• AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaP
  Applied Physics Letters, 1966