Complexes of Nitrogen and Point Defects in Silicon
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6A) , L997-999
- https://doi.org/10.1143/jjap.26.l997
Abstract
The effect of electron-irradiation is investigated on the optical absorption in nitrogen-doped Si. Two absorption peaks that have been ascribed to pairs of nitrogen atoms are found to split each into two peaks due to electron-irradiation. One of the two peaks after the splitting of each peak is attributed to the absorption due to vibration of an ordinary nitrogen atom-pair and the other to that of a complex consisting of a nitrogen atom-pair and a single vacancy.Keywords
This publication has 5 references indexed in Scilit:
- Electron paramagnetic resonance of a nitrogen-related centre in electron irradiated siliconSolid State Communications, 1984
- Temperature, stress, and annealing effects on the luminescence from electron-irradiated siliconJournal of Applied Physics, 1973
- Annealing of Electron-Irradiated-Type Silicon. I. Donor Concentration DependencePhysical Review B, 1971
- 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the DivacancyPhysical Review B, 1966
- Defects in Irradiated Silicon. II. Infrared Absorption of the Si-CenterPhysical Review B, 1961