Negatively charged hydrogen species inn-type GaAs

Se donors in doped n-type GaAs are passivated by exposure to a hydrogen plasma. The thermal reactivation of the passivated donors is investigated for the temperature range 154°C–191°C. By using the electric field of a reverse-biased Schottky-diode structure, the drift of the thermally dissociated hydrogen as a negatively charged species is demonstrated. The thermal dissociation of the SeH complex obeys first-order kinetics, with a dissociation energy ${\mathit{E}}_{\mathrm{SeH}}$=1.52±0.05 eV.