Use of self bias to improve power saturation and intermodulation distortion in CW class B HBT operation
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (5) , 174-176
- https://doi.org/10.1109/75.134345
Abstract
It is shown that a DC base bias circuit can be used to control the RF performance of a heterojunction bipolar transistor (HBT) operating under CW conditions near class B mode. By a careful choice of base bias resistance, gain can be linearized, output power at 1-dB gain compression increased, and intermodulation distortion reduced. Measurements performed on HBTs biased near class B operation showed a 10-dB improvement in 1-dB gain compression point and a 10-dB reduction in intermodulation distortion for moderate power levels. Results for various values of DC base resistance for a typical HBT are presented.Keywords
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