Molybdenum Film Technology For Power Metal Oxide Semiconductor Field Effect Transistor Gate Electrode Applications
- 1 July 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (7R)
- https://doi.org/10.1143/jjap.39.3915
Abstract
Molybdenum (Mo) film as a gate electrode for high-frequency power metal oxide semiconductor field effect transistor (MOSFET) has been investigated. The Mo films were deposited by sputtering in Ar ambient. The Mo films properties depend greatly on the substrate temperature. An accurate pattern was realized for Mo film. Stability and reliability of Mo gates for high-frequency power vertical double-diffused metal oxide semiconductor field effect transistors (VDMOSFETs) are as good as those of polysilicon gates. The shift of threshold voltage is below ±35 mV and the change of gate-source leakage current is less than 5 nA under the stress condition of ±5 MV/cm for 100 h at 250°C. Power gain and drain efficiency improvement of Mo gates for VDMOSFETs have been obtained.Keywords
This publication has 6 references indexed in Scilit:
- Effect of gate resistance on high-frequency power switching efficiencies of advanced power MOSFETsIEEE Journal of Solid-State Circuits, 1990
- A high-power high-gain VD-MOSFET operating at 900 MHzIEEE Transactions on Electron Devices, 1987
- Stability of Mo Gate MOS Devices Using High Purity Sputtering TargetJapanese Journal of Applied Physics, 1984
- Power MOSFET's for medium-wave and short-wave transmittersIEEE Transactions on Electron Devices, 1980
- 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspectiveIEEE Transactions on Electron Devices, 1979
- Self-Registered Molybdenum-Gate MOSFETJournal of the Electrochemical Society, 1968