Berechnung des unbeweglichen Anteiles der Raumladung im Halbleiter einer MOS-Struktur
- 31 December 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (12) , 1113-1118
- https://doi.org/10.1016/0038-1101(68)90003-8
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The effects of fixed bulk charge on the characteristics of metal-oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1966