Characterization of Lattice Damage in Ion Implanted Silicon: Monte Carlo Simulation Combined with Double Crystal X-Ray Diffraction
- 16 October 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 91 (2) , K125-K127
- https://doi.org/10.1002/pssa.2210910254
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Effect of diffuse scattering in the strain profile determination by double crystal X-ray diffractionPhysica Status Solidi (a), 1985
- Three-Dimensional Monte Carlo Simulations--Part II: Recoil PhenomenaIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
- Disorder production and amorphisation in ion implanted siliconRadiation Effects, 1980