A Si-based light-emitting diode with room-temperature electroluminescence at 1.1 eV

• 25 November 1996
• journal article
• Published by AIP Publishing in Applied Physics Letters
• Vol. 69  (22) , 3411-3413
• https://doi.org/10.1063/1.117276

Abstract

Keywords

• ELECTROLUMINESCENCE
• RADIATIVE RECOMBINATION
• PARTIAL OXIDATION
• LIGHT EMITTING DIODE
• CURRENT DENSITY
• ROOM TEMPERATURE