Manipulation of final state population in semiconductor heterostructures by pulsed laser fields
- 21 July 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (3) , 395-397
- https://doi.org/10.1063/1.119548
Abstract
Proper combination of pulsed laser fields allows optical control of electron inter(sub)band transitions in semiconductors leading to control of final state population. Based on a microscopic theory, we show that the final ratio of direct versus indirect excitons generated by a subpicosecond pump pulse in semiconductor double wells can be manipulated by simultaneous application of a resonant microwave pulse. Generalization and relevance of this result to other inter– and intersubband transitions is discussed.Keywords
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