A single step selective implantation technology for multiply doped layers using proximity annealing

1 December 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (12) , 309-311
https://doi.org/10.1109/edl.1981.25445

Abstract

A selective doping technology has been developed for GaAs that allows layers with multiple doping profiles to be prepared in a single implantation step. In this procedure, qualified GaAs Cr-doped substrates were masked With Si2N4and photoresist levels. The extent of doping in the underlying layer was controlled with the nitride thickness, as Si3N4has a stopping power nearly that of GaAs. Photoresist was used to define the undoped regions for isolation; completely exposed substrate regions received the total schedule. Implanting the patterned slice at multiple energies allowed the source-drain and gate regions to be appropriately doped in a single step. Proximity annealing was then carried out for implant activation. Small signal 10 GHz GaAs FET's were successfully fabricated without gate recessing on layers prepared by this technique.

Keywords

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