14-GHz band 1 watt GaAs f.e.t. amplifier
- 29 March 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (7) , 212-213
- https://doi.org/10.1049/el:19790149
Abstract
A 14.0–14.5 GHz 1 W amplifier using 0.5 μm gate length power GaAs f.e.t.s has been developed. The amplifier, consisting of a cascade of three single-ended stages, realises 13 dB small-signal gain, 1.1 W output-power saturation and 39 dBm third-order intermodulation intercept. The circuit design and the microwave performance of the amplifier are discussed.Keywords
This publication has 1 reference indexed in Scilit:
- Microwave GaAs Power FET Amplifiers with Lumped-Element Impedance Matching NetworksPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005