A novel germanium implanted salicide technology for CMOS VLSI

• 1 January 1988
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 35  (12) , 2436-2437
• https://doi.org/10.1109/16.8850

Abstract

Keywords

• TITANIUM
• PHOSPHORUS
• SILICIDE
• SALICIDE
• RESISTANCE
• GERMANIUM IMPLANTATION
• TUB CMOS