Multimillion-atom molecular dynamics simulation of atomic level stresses in Si(111)/Si3N4(0001) nanopixels
- 20 April 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (16) , 1969-1971
- https://doi.org/10.1063/1.121237
Abstract
Ten million atom multiresolution molecular-dynamics simulations are performed on parallel computers to determine atomic-level stress distributions in a 54 nm nanopixel on a 0.1 μm silicon substrate. Effects of surfaces, edges, and lattice mismatch at the Si(111)/Si3N4(0001) interface on the stress distributions are investigated. Stresses are found to be highly inhomogeneous in the nanopixel. The top surface of silicon nitride has a compressive stress of +3 GPa and the stress is tensile, −1 GPa, in silicon below the interface.Keywords
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