Infrared focal plane array incorporating silicon IC process compatible bolometer
- 1 November 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (11) , 1844-1850
- https://doi.org/10.1109/16.543017
Abstract
A 128/spl times/128 element bolometer infrared image sensor using thin film titanium is proposed. The device is a monolithically integrated structure with a titanium bolometer detector located over a CMOS circuit that reads out the bolometer's signals. By employing a metallic material like titanium and refining the CMOS readout circuit, it is possible to minimize 1/f noise. It is demonstrated that the use of low 1/f noise material will help increase bias current and improve the S/N ratio. Since the fabrication process is silicon-process compatible, costs can be kept low.Keywords
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