Avalanche noise characteristics of thin GaAs structures with distributed carrier generation [APDs]
- 1 May 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (5) , 910-914
- https://doi.org/10.1109/16.841220
Abstract
It is known that both pure electron and pure hole injection into thin GaAs multiplication regions gives rise to avalanche multiplication with noise lower than predicted by the local noise model. In this paper, it is shown that the noise from multiplication initiated by carriers generated throughout a 0.1 /spl mu/m avalanche region is also lower than predicted by the local model but higher than that obtained with pure injection of either carrier type. This behavior is due to the effects of nonlocal ionization brought about by the dead space; the minimum distance a carrier has to travel in the electric field to initiate an ionization event.Keywords
This publication has 13 references indexed in Scilit:
- A Monte Carlo investigation of multiplication noise in thin p/sup +/-i-n/sup +/ GaAs avalanche photodiodesIEEE Transactions on Electron Devices, 1998
- Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth productIEEE Photonics Technology Letters, 1998
- High-speed resonant-cavity separate absorption and multiplication avalanche photodiodes with 130 GHz gain-bandwidth productApplied Physics Letters, 1997
- Dead space approximation for impact ionization in siliconApplied Physics Letters, 1996
- Non-local aspects of breakdown in pin diodesSemiconductor Science and Technology, 1995
- Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodesIEEE Transactions on Electron Devices, 1992
- The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurementsIEEE Transactions on Electron Devices, 1985
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983
- Chapter 5 Avalanche PhotodiodesPublished by Elsevier ,1977
- Multiplication noise in uniform avalanche diodesIEEE Transactions on Electron Devices, 1966