Thermal Control of Metathesis Reactions Producing GaN and InN
- 23 October 2001
- journal article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry B
- Vol. 105 (47) , 11922-11927
- https://doi.org/10.1021/jp0126558
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Growth of zinc-blend-type structure GaN from a Na–Ga meltMaterials Letters, 2000
- Rapid Synthesis of Crystalline Gallium Nitride from Solid Precursors at Atmospheric PressureChemistry of Materials, 1999
- Plasma Nitridation of Metal OxidesChemistry of Materials, 1996
- Growth of Group III Nitrides. A Review of Precursors and TechniquesChemistry of Materials, 1996
- Synthesis and characterization of a nanostructured gallium nitride–PMMA compositeJournal of Materials Chemistry, 1996
- Gallium Imide, {Ga(NH)3/2}n, a New Polymeric Precursor for Gallium Nitride PowdersChemistry of Materials, 1996
- Lattice constants, thermal expansion and compressibility of gallium nitrideJournal of Physics D: Applied Physics, 1995
- Rapid solid-state synthesis of materials from molybdenum disulphide to refractoriesNature, 1991
- Crystal growth of GaN by the reaction between gallium and ammoniaJournal of Crystal Growth, 1984
- On the Preparation of the Nitrides of Aluminum and GalliumJournal of the Electrochemical Society, 1961