Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra
- 1 January 1992
- book chapter
- Published by Springer Nature in Springer Proceedings in Physics
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- Thermal Oxidation and Electrolytic Etching of Silicon CarbideJournal of the Electrochemical Society, 1975