Comparison of copper damascene and aluminum RIE metallization in BICMOS technology
- 28 February 2001
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 55 (1-4) , 257-268
- https://doi.org/10.1016/s0167-9317(00)00455-x
Abstract
No abstract availableKeywords
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- Passivation effect of silicon nitride against copper diffusionJournal of Applied Physics, 1997
- Barriers Against Copper Diffusion into Silicon and Drift Through Silicon DioxideMRS Bulletin, 1994
- Impact of copper contamination on the quality of silicon oxidesJournal of Applied Physics, 1989