Mechanisms of radical production in CF3Cl, CF3Br, and related plasma etching gases: The role of added oxidants
- 1 March 1981
- journal article
- Published by Springer Nature in Plasma Chemistry and Plasma Processing
- Vol. 1 (1) , 37-52
- https://doi.org/10.1007/bf00566374
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Etching and film formation in CF3Br plasmas: some qualitative observations and their general implicationsJournal of Vacuum Science and Technology, 1980
- Anisotropic plasma etching of polysiliconJournal of Vacuum Science and Technology, 1980
- Aluminum Etching in Carbon Tetrachloride PlasmasJournal of the Electrochemical Society, 1980
- The effect of added hydrogen on the rf discharge chemistry of CF4, CF3H, and C2F6Journal of Applied Physics, 1979
- The plasma oxidation of CF4 in a tubular-alumina fast-flow reactorJournal of Applied Physics, 1979
- Plasma etching—A discussion of mechanismsJournal of Vacuum Science and Technology, 1979
- Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmasJournal of Applied Physics, 1978
- Gas Phase Oxidation of PerhalocarbonsPublished by Wiley ,1969
- Chemical Reactivity of CF4 and C2F4 Induced by Electrical DischargeThe Journal of Physical Chemistry, 1955
- The absorption spectrum of CF2Transactions of the Faraday Society, 1950