A fast "τx" spin–lattice relaxation process in phosphorus donor pairs in silicon

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Abstract
A mechanism is proposed to explain the observed fast τx spin–lattice relaxation processes observed in close phosphorus donor pairs in silicon. The mechanism is based on a mixing of states of different total electronic spin by the hyperfine interaction and a modulation of the pair exchange energy by the lattice vibrations. The exchange-energy expression used is calculated from single-atom wave functions composed of linear combinations of the Bloch states at the six conduction-band minima. The resultant relaxation rate is shown to agree with experimental observations.

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