Oxidation Kinetics of Silicon Carbide Crystals and Ceramics: I, In Dry Oxygen
- 1 September 1986
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 69 (9) , 674-681
- https://doi.org/10.1111/j.1151-2916.1986.tb07470.x
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Isotope Labeling Studies of the Oxidation of Silicon at 1000° and 1300°CJournal of the Electrochemical Society, 1984
- Bubble Formation in Oxide Scales on SiCJournal of the American Ceramic Society, 1984
- Thermal Oxidation of SiC and Electrical Properties of Al–SiO2–SiC MOS StructureJapanese Journal of Applied Physics, 1982
- Boron Redistribution in Sintered α‐SiC During Thermal OxidationJournal of the American Ceramic Society, 1981
- Oxidation Kinetics of Hot‐Pressed and Sintered α‐SiCJournal of the American Ceramic Society, 1981
- Oxidation of silicon by water and oxygen and diffusion in fused silicaThe Journal of Physical Chemistry, 1976
- Thermal Oxidation and Electrolytic Etching of Silicon CarbideJournal of the Electrochemical Society, 1975
- On the Rates of Oxidation of Silicon and of Silicon Carbide in Oxygen, and Correlation with Permeability of Silica Glass.Acta Chemica Scandinavica, 1964
- Diffusion of Oxygen in Vitreous SilicaJournal of the American Ceramic Society, 1963
- Permeation of Gaseous Oxygen through Vitreous SilicaNature, 1961